Elpida EBJ81UG8BBU0-GN-F 8GB vs Crucial Technology BL16G32C16U4W.16FE 16GB

总分

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

差异规格评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB

需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB

报告一个错误

Crucial Technology BL16G32C16U4W.16FE 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4W.16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

32 44

左右 -38% 更低的延时
更快的读取速度，GB/s

20 13.2

测试中的平均数值
更快的写入速度，GB/s

15.4 9.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Elpida EBJ81UG8BBU0-GN-F 8GB

Crucial Technology BL16G32C16U4W.16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 32
读取速度，GB/s

13.2 20.0
写入速度，GB/s

9.1 15.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2302 3592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

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Samsung M393B2G70BH0-CK0 16GB

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GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

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Micron Technology TEAMGROUP-UD4-3000 16GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Kingston KTD3KX-MIB 8GB

Kingston KTD3KX-MIB 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Crucial Technology CT8G4DFS8213.C8FAD1 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB