Elpida EBJ81UG8BBU0-GN-F 8GB vs G Skill Intl F4-2800C16-4GRK 4GB

总分

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分

G Skill Intl F4-2800C16-4GRK 4GB

G Skill Intl F4-2800C16-4GRK 4GB

差异规格评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB

需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB

报告一个错误

G Skill Intl F4-2800C16-4GRK 4GB

需要考虑的原因
G Skill Intl F4-2800C16-4GRK 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 44

左右 -16% 更低的延时
更快的读取速度，GB/s

14.4 13.2

测试中的平均数值
更快的写入速度，GB/s

11.5 9.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Elpida EBJ81UG8BBU0-GN-F 8GB

G Skill Intl F4-2800C16-4GRK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 38
读取速度，GB/s

13.2 14.4
写入速度，GB/s

9.1 11.5
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2302 2856

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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A-DATA Technology AO1E34RCTV2-BZWS 32GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Crucial Technology BLS16G4D30CEST.16FD 16GB

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A-DATA Technology DQKD1A08 1GB

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G Skill Intl F4-2400C15-4GVR 4GB

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Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

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