Elpida EBJ81UG8BBU0-GN-F 8GB vs Micron Technology AFSD416ES1P 16GB

总分

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

总分

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

差异规格评论

差异

Elpida EBJ81UG8BBU0-GN-F 8GB

需要考虑的原因
Elpida EBJ81UG8BBU0-GN-F 8GB

报告一个错误

Micron Technology AFSD416ES1P 16GB

需要考虑的原因
Micron Technology AFSD416ES1P 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 44

左右 -76% 更低的延时
更快的读取速度，GB/s

14.5 13.2

测试中的平均数值
更快的写入速度，GB/s

10.7 9.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Elpida EBJ81UG8BBU0-GN-F 8GB

Micron Technology AFSD416ES1P 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 25
读取速度，GB/s

13.2 14.5
写入速度，GB/s

9.1 10.7
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2302 2620

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P32NC8W1-BD2SHC 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Samsung M393A4K40BB1-CRC 32GB

Samsung M393A4K40BB1-CRC 32GB

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G Skill Intl F5-6400J3239G16G 16GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

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Corsair CMSX32GX4M2A2400C16 16GB

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A-DATA Technology AD5U480016G-B 16GB

A-DATA Technology AD5U480016G-B 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

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Corsair CMK8GX4M2D2666C16 4GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB