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Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-4000C18-8GTRS 8GB

Essencore Limited KD48GU88C-26N1600 8GB vs G Skill Intl F4-4000C18-8GTRS 8GB

总分
star star star star star
Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTRS 8GB

G Skill Intl F4-4000C18-8GTRS 8GB

差异 规格 评论

差异

Essencore Limited KD48GU88C-26N1600 8GB 需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 29
    左右 38% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 17.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
G Skill Intl F4-4000C18-8GTRS 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTRS 8GB
报告一个错误
  • 更快的写入速度，GB/s
    18.0 left arrow 16.4
    测试中的平均数值

规格

完整的技术规格清单
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    18 left arrow 29
  • 读取速度，GB/s
    20.5 left arrow 17.6
  • 写入速度，GB/s
    16.4 left arrow 18.0
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3530 left arrow 3872

Essencore Limited KD48GU88C-26N1600 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4000C18-8GTRS 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C16-8GVK 8GB
G Skill Intl F4-3600C16-8GVK 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Corsair CMK8GX4M2B4266C19 4GB
Corsair CMK8GX4M2B4266C19 4GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Corsair CM4B16G1J2400A16K2-O 16GB
Corsair CM4B16G1J2400A16K2-O 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK128GX4M8X3800C19 16GB
Corsair CMK128GX4M8X3800C19 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Avant Technology W6451U67J7240NB 4GB
Avant Technology W6451U67J7240NB 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Transcend Information TS1GLH64V1H 8GB
Transcend Information TS1GLH64V1H 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
Crucial Technology BLS8G4D240FSC.16FARG 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Apacer Technology 78.C2GF6.AU20B 8GB
Apacer Technology 78.C2GF6.AU20B 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
Crucial Technology BLT8G4D26AFTA.16FAD 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905711-017.A00G 4GB
Kingston 9905711-017.A00G 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9965669-005.A01G 16GB
Kingston 9965669-005.A01G 16GB
内存RAM