Essencore Limited KD48GU88C-26N1600 8GB vs Samsung M391A2K43BB1-CPB 16GB

总分

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

总分

Samsung M391A2K43BB1-CPB 16GB

Samsung M391A2K43BB1-CPB 16GB

差异规格评论

差异

Essencore Limited KD48GU88C-26N1600 8GB

需要考虑的原因
Essencore Limited KD48GU88C-26N1600 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 34

左右 47% 更低的延时
更快的读取速度，GB/s

20.5 14.9

测试中的平均数值
更快的写入速度，GB/s

16.4 11.7

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Samsung M391A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M391A2K43BB1-CPB 16GB

报告一个错误

规格

完整的技术规格清单

Essencore Limited KD48GU88C-26N1600 8GB

Samsung M391A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

18 34
读取速度，GB/s

20.5 14.9
写入速度，GB/s

16.4 11.7
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3530 3075

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK8GX4M2A2800C16 4GB

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PNY Electronics PNY 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

Gold Key Technology Co Ltd NMUD416E82-4000F 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16ATF2G64HZ-2G6E3 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 9965639-002.A01G 8GB

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G Skill Intl F4-3200C15-16GVK 16GB

G Skill Intl F4-3200C15-16GVK 16GB