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G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB

G Skill Intl F2-5300CL4-1GBSA 1GB vs Crucial Technology CT4G4DFS8213.C8FAR1 4GB

总分
star star star star star
G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FAR1 4GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB

差异 规格 评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB 需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.4
    测试中的平均数值
Crucial Technology CT4G4DFS8213.C8FAR1 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 52
    左右 -44% 更低的延时
  • 更快的写入速度，GB/s
    10.6 left arrow 1,479.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 36
  • 读取速度，GB/s
    4,226.4 left arrow 13.4
  • 写入速度，GB/s
    1,479.2 left arrow 10.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 4 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    590 left arrow 2734

G Skill Intl F2-5300CL4-1GBSA 1GB RAM的比较

G Skill Intl F2-5300PHU1-1GBSA 1GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB

Crucial Technology CT4G4DFS8213.C8FAR1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Crucial Technology CT25664AA800.M16FM 2GB
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Netac Technology Co Ltd EKBLACK4163216AD 8GB
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Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
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Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Kingston MSI24D4U7D8MD-16 16GB
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内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMK16GX4M4B3733C17 4GB
Corsair CMK16GX4M4B3733C17 4GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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Avant Technology J641GU42J7240N3 8GB
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Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Apacer Technology 78.CAGPL.ARC0B 8GB
Apacer Technology 78.CAGPL.ARC0B 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL32G32C16S4B.16FB 32GB
Crucial Technology BL32G32C16S4B.16FB 32GB
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Samsung M4 70T2953EZ3-CE6 1GB
Kingston KHX3300C16D4/4GX 4GB
Kingston KHX3300C16D4/4GX 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-4000C19-16GTRG 16GB
G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
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Samsung M393B2G70BH0-CH9 16GB
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Corsair CMK32GX4M2B3333C16 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston ACR26D4U9S8ME-8X 8GB
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