G Skill Intl F2-5300CL4-1GBSA 1GB vs Micron Technology 16ATF2G64AZ-2G1A1 16GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Micron Technology 16ATF2G64AZ-2G1A1 16GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值

Micron Technology 16ATF2G64AZ-2G1A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G1A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 52

左右 -58% 更低的延时
更快的写入速度，GB/s

10.2 1,479.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 16ATF2G64AZ-2G1A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 33
读取速度，GB/s

4,226.4 14.9
写入速度，GB/s

1,479.2 10.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

590 2800

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 93T5750CZA-CE6 2GB

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