G Skill Intl F2-5300CL4-1GBSA 1GB vs Samsung M378A5143DB0-CPB 4GB

总分

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

总分

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

差异规格评论

差异

G Skill Intl F2-5300CL4-1GBSA 1GB

需要考虑的原因
G Skill Intl F2-5300CL4-1GBSA 1GB

报告一个错误

更快的读取速度，GB/s

4 14.4

测试中的平均数值

Samsung M378A5143DB0-CPB 4GB

需要考虑的原因
Samsung M378A5143DB0-CPB 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 52

左右 -44% 更低的延时
更快的写入速度，GB/s

10.6 1,479.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-5300CL4-1GBSA 1GB

Samsung M378A5143DB0-CPB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 36
读取速度，GB/s

4,226.4 14.4
写入速度，GB/s

1,479.2 10.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 4 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

590 2490

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-5300CL4-1GBSA 1GB

Samsung M378A5143DB0-CPB 4GB

Samsung M378A5143DB0-CPB 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3600C16-8GTZN 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston MSI24D4S7D8MB-16 16GB

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Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB