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G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology DDR4 3200 2OZ 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs A-DATA Technology DDR4 3200 2OZ 4GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
A-DATA Technology DDR4 3200 2OZ 4GB

A-DATA Technology DDR4 3200 2OZ 4GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 17.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 13.8
    测试中的平均数值
A-DATA Technology DDR4 3200 2OZ 4GB 需要考虑的原因
A-DATA Technology DDR4 3200 2OZ 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 45
    左右 -55% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 29
  • 读取速度，GB/s
    6,336.8 left arrow 17.2
  • 写入速度，GB/s
    2,935.8 left arrow 13.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 3409

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

A-DATA Technology DDR4 3200 2OZ 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B1K70QB0-CK0 8GB
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内存RAM
Kingston 9905403-174.A00LF 2GB
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Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
A-DATA Technology DDR4 3200 2OZ 4GB
A-DATA Technology DDR4 3200 2OZ 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
Crucial Technology CT4G4DFS8266.C8FG 4GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CM4B16G1L3200K18K2 16GB
Corsair CM4B16G1L3200K18K2 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
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内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Avant Technology J642GU42J5213N4 16GB
Avant Technology J642GU42J5213N4 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
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内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Corsair CMK16GX4M2L3200C16 8GB
Corsair CMK16GX4M2L3200C16 8GB
内存RAM
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Samsung M471B1G73QH0-YK0 8GB
Kingston 9905598-040.A00G 16GB
Kingston 9905598-040.A00G 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Corsair CMW64GX4M8C3000C15 8GB
Corsair CMW64GX4M8C3000C15 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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Crucial Technology BLS8G4S240FSD.16FBD 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
Crucial Technology CT8G4DFD8213.C16FAR1 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C-H9 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7AFR4C
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM