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G Skill Intl F2-8500CL5-2GBPI 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
15.9
测试中的平均数值
更快的写入速度,GB/s
2,935.8
12.0
测试中的平均数值
需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
45
左右 -80% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
25
读取速度,GB/s
6,336.8
15.9
写入速度,GB/s
2,935.8
12.0
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1144
3023
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB RAM的比较
Corsair CMSO4GX3M1C1600C11 4GB
Samsung M393B5170EH1-CH9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2953EZ3-CF7 1GB
Kingston KHX3600C18D4/32GX 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
SK Hynix HMA82GU6AFR8N-TF 16GB
Samsung M378B5173BH0-CH9 4GB
Corsair CM4X8GF2400C14K4 8GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3000C14-16GVK 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston XRGM6C-MIB 16GB
Kingston 99P5471-002.A00LF 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston X75V1H-MIE 32GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT8G4SFD824AC16FBD1 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Asgard VMA45UG-MEC1U2AW1 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
G Skill Intl F4-2666C18-4GFX 4GB
Corsair CM2X1024-6400C4 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T2953EZ3-CF7 1GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
报告一个错误
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Bug description
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