G Skill Intl F2-8500CL5-2GBPI 2GB vs Corsair CMK128GX4M8X3800C19 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Corsair CMK128GX4M8X3800C19 16GB

Corsair CMK128GX4M8X3800C19 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 68

左右 34% 更低的延时
更快的读取速度，GB/s

6 16.1

测试中的平均数值

Corsair CMK128GX4M8X3800C19 16GB

需要考虑的原因
Corsair CMK128GX4M8X3800C19 16GB

报告一个错误

更快的写入速度，GB/s

9.0 2,935.8

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMK128GX4M8X3800C19 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 68
读取速度，GB/s

6,336.8 16.1
写入速度，GB/s

2,935.8 9.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1144 2037

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A5244CB0-CWE 4GB

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Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-3000C15-4GRR 4GB

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Kingston 99U5474-010.A00LF 2GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Corsair CMK4GX4M1A2400C16 4GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Kingston KF3200C20S4/16GX 16GB

Kingston KF3200C20S4/16GX 16GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Kingston 9905622-075.A00G 8GB

Kingston 9905622-075.A00G 8GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Corsair CM4X8GF2666Z16K4 8GB

Corsair CM4X8GF2666Z16K4 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

SK Hynix HMA425S6BJR6N-UH 2GB

SK Hynix HMA425S6BJR6N-UH 2GB