G Skill Intl F2-8500CL5-2GBPI 2GB vs Corsair CMW16GX4M1D3000C16 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Corsair CMW16GX4M1D3000C16 16GB

Corsair CMW16GX4M1D3000C16 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 18.1

测试中的平均数值
更快的写入速度，GB/s

2,935.8 14.8

测试中的平均数值

Corsair CMW16GX4M1D3000C16 16GB

需要考虑的原因
Corsair CMW16GX4M1D3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 45

左右 -67% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMW16GX4M1D3000C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 27
读取速度，GB/s

6,336.8 18.1
写入速度，GB/s

2,935.8 14.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1144 3779

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Apacer Technology 78.CAGP7.C7Z0B 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

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Kingston 9905471-001.A01LF 2GB

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Kingston XW21KG-HYD-NX 8GB

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Kingston 9905471-076.A00LF 8GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB

Micron Technology 18ADF2G72AZ-2G3B1 16GB