G Skill Intl F2-8500CL5-2GBPI 2GB vs Corsair MK16GX4M2B3200C16 8GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Corsair MK16GX4M2B3200C16 8GB

Corsair MK16GX4M2B3200C16 8GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 12.8

测试中的平均数值
更快的写入速度，GB/s

2,935.8 10.2

测试中的平均数值

Corsair MK16GX4M2B3200C16 8GB

需要考虑的原因
Corsair MK16GX4M2B3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 45

左右 -80% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair MK16GX4M2B3200C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 25
读取速度，GB/s

6,336.8 12.8
写入速度，GB/s

2,935.8 10.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 31 32 33 34 35 36 37 38
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1144 2583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Micron Technology 8ATF2G64HZ-3G2B2 16GB

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Samsung 1600 CL10 Series 8GB

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Crucial Technology CT4G4SFS824A.M8FE 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair MK16GX4M2B3200C16 8GB

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Micron Technology 18ADF2G72PZ-2G3B1 16GB

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SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Kingston MSI24D4S7D8MB-16 16GB

Kingston MSI24D4S7D8MB-16 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

Crucial Technology CT8G4DFRA266.C8FE 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Kingmax Semiconductor FLGE85F-C8KJ9A 2GB

Kingmax Semiconductor FLGE85F-C8KJ9A 2GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB