G Skill Intl F2-8500CL5-2GBPI 2GB vs Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 67

左右 33% 更低的延时
更快的读取速度，GB/s

6 15.9

测试中的平均数值

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

报告一个错误

更快的写入速度，GB/s

8.4 2,935.8

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BLS4G4D26BFSC.8FBR2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 67
读取速度，GB/s

6,336.8 15.9
写入速度，GB/s

2,935.8 8.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1144 1895

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Wilk Elektronik S.A. GR2666S464L19S/8G 8GB

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Samsung M471B1G73QH0-YK0 8GB

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M378A1K43BB2-CRC 8GB

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Apacer Technology 78.C2GF6.AU20B 8GB

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Mushkin MRA4S293MMMF32G 32GB

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Corsair CMK32GX4M4A2400C12 8GB

Corsair CMK32GX4M4A2400C12 8GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Corsair CM4X8GD3000C15K4 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Corsair CMT64GX4M8C3200C16 8GB

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Kingston 9905471-006.A01LF 4GB

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Kingston 9905712-010.A00G 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N