G Skill Intl F2-8500CL5-2GBPI 2GB vs Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 17.1

测试中的平均数值
更快的写入速度，GB/s

2,935.8 13.2

测试中的平均数值

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 45

左右 -50% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Crucial Technology BLS8G4D26BFSB.16FBD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 30
读取速度，GB/s

6,336.8 17.1
写入速度，GB/s

2,935.8 13.2
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1144 3047

RAM Latency Calculator

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Transcend Information JM3200HSE-32G 32GB

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Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

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Samsung M378B5773DH0-CH9 2GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

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Crucial Technology CT4G4DFS824A.M8FB 4GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB