G Skill Intl F2-8500CL5-2GBPI 2GB vs G Skill Intl F4-2400C15-16GFXR 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

G Skill Intl F4-2400C15-16GFXR 16GB

G Skill Intl F4-2400C15-16GFXR 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 18.4

测试中的平均数值
更快的写入速度，GB/s

2,935.8 13.5

测试中的平均数值

G Skill Intl F4-2400C15-16GFXR 16GB

需要考虑的原因
G Skill Intl F4-2400C15-16GFXR 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 45

左右 -105% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-2400C15-16GFXR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 22
读取速度，GB/s

6,336.8 18.4
写入速度，GB/s

2,935.8 13.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 9 11 13 14 15
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1144 3286

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F2-8500CL5-2GBPI 2GB

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G Skill Intl F4-2400C15-16GFXR 16GB

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Samsung M393B1K70DH0-YH9 8GB

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Corsair CMT32GX4M4C3200C16 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Mushkin 99[2/7/4]198F 8GB

Mushkin 99[2/7/4]198F 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB