G Skill Intl F2-8500CL5-2GBPI 2GB vs G Skill Intl F4-4000C19-8GTZKW 8GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

G Skill Intl F4-4000C19-8GTZKW 8GB

G Skill Intl F4-4000C19-8GTZKW 8GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 19

测试中的平均数值
更快的写入速度，GB/s

2,935.8 15.8

测试中的平均数值

G Skill Intl F4-4000C19-8GTZKW 8GB

需要考虑的原因
G Skill Intl F4-4000C19-8GTZKW 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 45

左右 -80% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-4000C19-8GTZKW 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 25
读取速度，GB/s

6,336.8 19.0
写入速度，GB/s

2,935.8 15.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1144 3668

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Chun Well Technology Holding Limited CL18-20-20 D4-3600

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Kingston KVR16N11/8-SP 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Kingston 99U5700-010.A00G 8GB

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Nanya Technology M2Y2G64TU8HD5B-AC 2GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

A-DATA Technology AM1P24HC4R1-BUNS 4GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Apacer Technology 78.BAGNF.40C0B 4GB

Apacer Technology 78.BAGNF.40C0B 4GB