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G Skill Intl F2-8500CL5-2GBPI 2GB
Gloway International (HK) STK4U2133D15081C 8GB
比较
G Skill Intl F2-8500CL5-2GBPI 2GB vs Gloway International (HK) STK4U2133D15081C 8GB
总分
G Skill Intl F2-8500CL5-2GBPI 2GB
总分
Gloway International (HK) STK4U2133D15081C 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
更快的读取速度,GB/s
6
16.8
测试中的平均数值
更快的写入速度,GB/s
2,935.8
12.3
测试中的平均数值
需要考虑的原因
Gloway International (HK) STK4U2133D15081C 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
45
左右 -105% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Gloway International (HK) STK4U2133D15081C 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
45
22
读取速度,GB/s
6,336.8
16.8
写入速度,GB/s
2,935.8
12.3
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1144
3036
G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较
OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB
Gloway International (HK) STK4U2133D15081C 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Elpida EBJ40UG8BBU0-GN-F 4GB
Corsair CM4B8G4J2400A16K2-ON 8GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 8ATF1G64AZ-2G6E1 8GB
报告一个错误
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Bug description
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