G Skill Intl F2-8500CL5-2GBPI 2GB vs Gloway International (HK) STKD4GAM2400-F 8GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Gloway International (HK) STKD4GAM2400-F 8GB

Gloway International (HK) STKD4GAM2400-F 8GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 83

左右 46% 更低的延时
更快的读取速度，GB/s

6 14.3

测试中的平均数值

Gloway International (HK) STKD4GAM2400-F 8GB

需要考虑的原因
Gloway International (HK) STKD4GAM2400-F 8GB

报告一个错误

更快的写入速度，GB/s

7.8 2,935.8

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Gloway International (HK) STKD4GAM2400-F 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 83
读取速度，GB/s

6,336.8 14.3
写入速度，GB/s

2,935.8 7.8
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1144 1752

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B5170FH0-CH9 4GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Crucial Technology CT102464BF160B.C16 8GB

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Nanya Technology NT512T64U88B0BY-3C 512MB

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G Skill Intl F4-2400C16-16GFX 16GB

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PNY Electronics PNY 2GB

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Kingston 9905702-082.A00G 8GB

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Kingston XW21KG-MIE-NX 8GB

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PNY Electronics PNY 2GB

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SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

Crucial Technology CT16G4DFD824A.M16FB 16GB

AMD R5S38G1601U2S 8GB

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Essencore Limited IM4AGS88N24-FFFHA0 16GB

Essencore Limited IM4AGS88N24-FFFHA0 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

G Skill Intl F4-3000C15-8GVGB 8GB

G Skill Intl F4-3000C15-8GVGB 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Corsair CM4X8GE2666C16K4 8GB

Corsair CM4X8GE2666C16K4 8GB