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G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB vs Micron Technology 4ATF51264AZ-2G3E1 4GB

总分
star star star star star
G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分
star star star star star
Micron Technology 4ATF51264AZ-2G3E1 4GB

Micron Technology 4ATF51264AZ-2G3E1 4GB

差异 规格 评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB 需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB
报告一个错误
  • 更快的读取速度，GB/s
    6 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,935.8 left arrow 10.9
    测试中的平均数值
Micron Technology 4ATF51264AZ-2G3E1 4GB 需要考虑的原因
Micron Technology 4ATF51264AZ-2G3E1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 45
    左右 -67% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 27
  • 读取速度，GB/s
    6,336.8 left arrow 15.0
  • 写入速度，GB/s
    2,935.8 left arrow 10.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1144 left arrow 2288

G Skill Intl F2-8500CL5-2GBPI 2GB RAM的比较

OCZ OCZ2T8001G 1GB
Micron Technology 9HTF6472FY-667B4D3 512MB

Micron Technology 4ATF51264AZ-2G3E1 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
Micron Technology 4ATF51264AZ-2G3E1 4GB
内存RAM
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
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G Skill Intl F4-3600C16-8GTZR 8GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
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内存RAM
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内存RAM
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AMD AE34G1601U1 4GB
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Apacer Technology 78.BAGN8.40C0B 4GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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Avant Technology W641GU42J7240NC 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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Micron Technology 9ASF1G72PZ-2G9E1 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM