G Skill Intl F2-8500CL5-2GBPI 2GB vs Micron Technology TEAMGROUP-UD4-2400 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Micron Technology TEAMGROUP-UD4-2400 16GB

Micron Technology TEAMGROUP-UD4-2400 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

更快的读取速度，GB/s

6 16.8

测试中的平均数值
更快的写入速度，GB/s

2,935.8 11.3

测试中的平均数值

Micron Technology TEAMGROUP-UD4-2400 16GB

需要考虑的原因
Micron Technology TEAMGROUP-UD4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 45

左右 -50% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology TEAMGROUP-UD4-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 30
读取速度，GB/s

6,336.8 16.8
写入速度，GB/s

2,935.8 11.3
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1144 3119

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix GKE800SO51208-2133AH 8GB

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Corsair CMK8GX4M1E3200C16 8GB

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Kingston 99U5474-038.A00LF 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology CT16G4DFD824A.M16FD 16GB

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Samsung M393B1K70CH0-CH9 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston XJV223-MIE-NX 16GB

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Corsair CML8GX3M2A1866C9 4GB

Corsair CML8GX3M2A1866C9 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

Corsair CMX4GX3M2A1600C9 2GB

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Kingston KF3200C20S4/16G 16GB

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Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston KMKYF9-MIH 8GB

Kingston KMKYF9-MIH 8GB