G Skill Intl F2-8500CL5-2GBPI 2GB vs Samsung M393A4K40BB0-CPB 32GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Samsung M393A4K40BB0-CPB 32GB

Samsung M393A4K40BB0-CPB 32GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 56

左右 20% 更低的延时

Samsung M393A4K40BB0-CPB 32GB

需要考虑的原因
Samsung M393A4K40BB0-CPB 32GB

报告一个错误

更快的读取速度，GB/s

9.5 6

测试中的平均数值
更快的写入速度，GB/s

7.9 2,935.8

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M393A4K40BB0-CPB 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 56
读取速度，GB/s

6,336.8 9.5
写入速度，GB/s

2,935.8 7.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1144 2294

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

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Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Ramaxel Technology RMSA3300ME78HBF-2666 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Corsair CM4X16GE2400C16K4 16GB

Corsair CM4X16GE2400C16K4 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Corsair CM4X16GE2666C18S2 16GB

Corsair CM4X16GE2666C18S2 16GB