G Skill Intl F2-8500CL5-2GBPI 2GB vs Samsung M471A2G43BB2-CWE 16GB

总分

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

总分

Samsung M471A2G43BB2-CWE 16GB

Samsung M471A2G43BB2-CWE 16GB

差异规格评论

差异

G Skill Intl F2-8500CL5-2GBPI 2GB

需要考虑的原因
G Skill Intl F2-8500CL5-2GBPI 2GB

报告一个错误

低于PassMark测试中的延时，ns

45 60

左右 25% 更低的延时
更快的读取速度，GB/s

6 14.9

测试中的平均数值
更快的写入速度，GB/s

2,935.8 12.0

测试中的平均数值

Samsung M471A2G43BB2-CWE 16GB

需要考虑的原因
Samsung M471A2G43BB2-CWE 16GB

报告一个错误

更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M471A2G43BB2-CWE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 60
读取速度，GB/s

6,336.8 14.9
写入速度，GB/s

2,935.8 12.0
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1144 2511

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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InnoDisk Corporation 16GB

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Corsair CM4B8G2J2133A15S 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Corsair CMK16GX4M2Z2933C16 8GB

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GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB

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Crucial Technology CT8G4DFRA32A.C8FP 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Crucial Technology CT8G4DFD8213.C16FBD2 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Elpida EBJ81UG8BBU0-GN-F 8GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Micron Technology 36ASF2G72PZ-2G3B1 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Teikon TMA851S6AFR6N-UHHC 4GB

Teikon TMA851S6AFR6N-UHHC 4GB