G Skill Intl F3-10600CL9-2GBNT 2GB vs Corsair CMR16GX4M2D3000C16 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Corsair CMR16GX4M2D3000C16 8GB

Corsair CMR16GX4M2D3000C16 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 4% 更低的延时

Corsair CMR16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMR16GX4M2D3000C16 8GB

报告一个错误

更快的读取速度，GB/s

18.1 13.2

测试中的平均数值
更快的写入速度，GB/s

13.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Corsair CMR16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 27
读取速度，GB/s

13.2 18.1
写入速度，GB/s

8.4 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 3365

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Essencore Limited KD48GU88A-26N1600 8GB

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V-GEN D4H4GL26A8TS5 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Micron Technology 8ATF1G64HZ-2G3E1 8GB

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Kingston 9905403-447.A00LF 4GB

Kingston 9905403-447.A00LF 4GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Gloway International Co. Ltd. TYA4U2666D19081C 8GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

INTENSO GKE800UD102408-2133 8GB

INTENSO GKE800UD102408-2133 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Corsair CM4X8GF2400C14K4 8GB

Corsair CM4X8GF2400C14K4 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

SK Hynix HMAA2GU6CJR8N-XN 16GB

SK Hynix HMAA2GU6CJR8N-XN 16GB