G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology BL8G30C15U4B.M8FE 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Crucial Technology BL8G30C15U4B.M8FE 8GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Crucial Technology BL8G30C15U4B.M8FE 8GB

需要考虑的原因
Crucial Technology BL8G30C15U4B.M8FE 8GB

报告一个错误

更快的读取速度，GB/s

16.5 13.2

测试中的平均数值
更快的写入速度，GB/s

13.8 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology BL8G30C15U4B.M8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

13.2 16.5
写入速度，GB/s

8.4 13.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2070 3273

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Apacer Technology D12.2326WH.001 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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Kingston KHX3466C19D4/16G 16GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

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Crucial Technology CT16G4DFD8266.C16FN 16GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

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Corsair CMR16GX4M2C 8GB

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Samsung M471B5173DB0-YK0 4GB

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Patriot Memory (PDP Systems) PSD416G21332 16GB

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SK Hynix HMT42GR7AFR4A-PB 16GB

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Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB