G Skill Intl F3-10600CL9-2GBNT 2GB vs Crucial Technology CT16G4DFD8213.C16FDD 16GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时

Crucial Technology CT16G4DFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FDD 16GB

报告一个错误

更快的读取速度，GB/s

14.7 13.2

测试中的平均数值
更快的写入速度，GB/s

9.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

13.2 14.7
写入速度，GB/s

8.4 9.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2133C1XMP 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 9965667-001.A00G 16GB

Kingston 9965667-001.A00G 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KHX2666C13/8GX 8GB

Kingston KHX2666C13/8GX 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

G Skill Intl F4-4133C17-8GTZR 8GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Corsair CMG16GX4M2D3600C18 8GB

Corsair CMG16GX4M2D3600C18 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Shenzhen Xingmem Technology Corp M378A1K43BB1-CPB 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Crucial Technology BLS8G4D240FSC.M16FAD 8GB

Corsair CMX8GX3M2A2000C9 4GB

Corsair CMX8GX3M2A2000C9 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

Micron Technology 4ATF51264HZ-2G6E3 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Essencore Limited KD48GU881-26N190D 8GB

Essencore Limited KD48GU881-26N190D 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB