G Skill Intl F3-10600CL9-2GBNT 2GB vs G Skill Intl F4-2666C15-4GVK 4GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

G Skill Intl F4-2666C15-4GVK 4GB

需要考虑的原因
G Skill Intl F4-2666C15-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 26

左右 -8% 更低的延时
更快的读取速度，GB/s

15.9 13.2

测试中的平均数值
更快的写入速度，GB/s

11.8 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F4-2666C15-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 24
读取速度，GB/s

13.2 15.9
写入速度，GB/s

8.4 11.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 2508

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

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Samsung M3 78T2863EHS-CF7 1GB

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SK Hynix HYMP164U64CP6-Y5 512MB

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Crucial Technology CT8G4DFD824A.M16FE 8GB

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Kingston KHX1600C9S3L/4G 4GB

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Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

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Kingston 99U5471-012.A00LF 4GB

Corsair CMD32GX4M2B3000C15 16GB

Corsair CMD32GX4M2B3000C15 16GB

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G Skill Intl F4-3000C15-4GRK 4GB