G Skill Intl F3-10600CL9-2GBNT 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时
更快的读取速度，GB/s

13.2 11.1

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

报告一个错误

更快的写入速度，GB/s

9.5 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

13.2 11.1
写入速度，GB/s

8.4 9.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2070 2319

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 99U5474-026.A00LF 4GB

Kingston MSI24D4S7S7MH-16 16GB

Kingston MSI24D4S7S7MH-16 16GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

SK Hynix HYMP112S64CP6-S6 1GB

SK Hynix HYMP112S64CP6-S6 1GB

Smart Modular SF464128CK8I6GKSEG 4GB

Smart Modular SF464128CK8I6GKSEG 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA84GR7AFR4N-UH 32GB

SK Hynix HMA84GR7AFR4N-UH 32GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston 9965640-004.C00G 16GB

Kingston 9965640-004.C00G 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M391A2K43BB1-CRC 16GB

Samsung M391A2K43BB1-CRC 16GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

Crucial Technology CT8G4DFD824A.C16FHP 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Crucial Technology CT32G4SFD832A.C16FE 32GB

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Kingston ACR21D4S15HAG/8G 8GB

Kingston ACR21D4S15HAG/8G 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMT32GX4M2C3200C14 16GB

Corsair CMT32GX4M2C3200C14 16GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Kingston KHX2133C13S4/8G 8GB

Kingston KHX2133C13S4/8G 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB