RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
比较
G Skill Intl F3-10600CL9-2GBNT 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
总分
G Skill Intl F3-10600CL9-2GBNT 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
低于PassMark测试中的延时,ns
26
33
左右 21% 更低的延时
更快的读取速度,GB/s
13.2
11.6
测试中的平均数值
更快的写入速度,GB/s
8.4
8.3
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
33
读取速度,GB/s
13.2
11.6
写入速度,GB/s
8.4
8.3
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2070
2227
G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB RAM的比较
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT102464BF160B-16F 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston HX421C14FB/4 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology AM2P26KC8T1-BXRS 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston XRMWRN-MIE 16GB
Kingston 9965433-034.A00LF 4GB
G Skill Intl F4-3600C16-8GVKC 8GB
Kingston 9905471-006.A00LF 4GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Kingston 9905625-036.A00G 16GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Samsung M378B5673EH1-CF8 2GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
Kingston KHX2133C11D3/4GX 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-2133C15-8GVR 8GB
报告一个错误
×
Bug description
Source link