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G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 29
    左右 10% 更低的延时
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.8 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 29
  • 读取速度，GB/s
    13.2 left arrow 13.8
  • 写入速度，GB/s
    8.4 left arrow 11.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 2690

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM的比较

Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMW16GX4M2A2666C16 8GB
Corsair CMW16GX4M2A2666C16 8GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9905630-031.A00G 16GB
Kingston 9905630-031.A00G 16GB
内存RAM
Ramaxel Technology RMT3010EC58E8F1333 2GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
G Skill Intl F4-3000C14-8GVR 8GB
G Skill Intl F4-3000C14-8GVR 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
内存RAM
Kingston HX316C10F/8 8GB
Kingston HX316C10F/8 8GB
Corsair CMT32GX4M2Z3200C16 16GB
Corsair CMT32GX4M2Z3200C16 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905734-018.A00G 16GB
Kingston 9905734-018.A00G 16GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Corsair CMD32GX4M4C3000C15 8GB
Corsair CMD32GX4M4C3000C15 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology BL16G26C16U4B.16FD 16GB
Crucial Technology BL16G26C16U4B.16FD 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Corsair CMV16GX4M1A2666C18 16GB
Corsair CMV16GX4M1A2666C18 16GB
内存RAM