G Skill Intl F3-10600CL9-2GBNT 2GB vs Micron Technology 4ATF51264HZ-2G3E2 4GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

Micron Technology 4ATF51264HZ-2G3E2 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E2 4GB

报告一个错误

更快的读取速度，GB/s

15.8 13.2

测试中的平均数值
更快的写入速度，GB/s

12.2 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

13.2 15.8
写入速度，GB/s

8.4 12.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 2865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 93T5750CZA-CE6 2GB

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Essencore Limited KD4AGU880-32A160U 16GB

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Corsair CMK32GX4M2E3200C16 16GB

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Kingston KF2666C15S4/16G 16GB

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Kingston 99U5584-001.A00LF 4GB

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Crucial Technology CT4G4SFS8266.C8FE 4GB

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Kingston KHX1600C9D3/8G 8GB

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Essencore Limited KD48GU880-36A180Z 8GB

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Samsung M393B1K70CH0-YH9 8GB

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Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-4400C16-8GTZR 8GB

G Skill Intl F4-4400C16-8GTZR 8GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

Ramaxel Technology RMR5030ME68F9F1600 4GB

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Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB

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Samsung M471B5273DH0-CH9 4GB

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB