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G Skill Intl F3-10600CL9-2GBNT 2GB
Transcend Information TS512MLH64V4H 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB vs Transcend Information TS512MLH64V4H 4GB

总分
star star star star star
G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分
star star star star star
Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

差异 规格 评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB 需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB
报告一个错误
Transcend Information TS512MLH64V4H 4GB 需要考虑的原因
Transcend Information TS512MLH64V4H 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 26
    左右 -13% 更低的延时
  • 更快的读取速度，GB/s
    16.6 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10600CL9-2GBNT 2GB
Transcend Information TS512MLH64V4H 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 23
  • 读取速度，GB/s
    13.2 left arrow 16.6
  • 写入速度，GB/s
    8.4 left arrow 13.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2070 left arrow 2548

G Skill Intl F3-10600CL9-2GBNT 2GB RAM的比较

A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Transcend Information TS512MLH64V4H 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5584-017.A00LF 4GB
Kingston 99U5584-017.A00LF 4GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Team Group Inc. TEAMGROUP-UD4-4133 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
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Crucial Technology BLS4G4D240FSA.8FBD 4GB
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内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
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内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Apacer Technology D12.2356WS.001 8GB
Apacer Technology D12.2356WS.001 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
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Crucial Technology BL8G32C16U4BL.8FE 8GB
Crucial Technology BL8G32C16U4BL.8FE 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
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Essencore Limited KD4AGU880-36A180U 16GB
内存RAM
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Nanya Technology NT512T64U88B0BY-3C 512MB
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Corsair CMK8GX4M2B3200C16 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
G Skill Intl F4-3000C15-4GTZ 4GB
G Skill Intl F4-3000C15-4GTZ 4GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Kingston ACR26D4S9S8KA-8 8GB
内存RAM
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Crucial Technology BL16G36C16U4W.M8FB1 16GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Corsair CM4X32GE2666C18S2 32GB
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