G Skill Intl F3-10600CL9-2GBNT 2GB vs V-GEN D4R8GL24A8R 8GB

总分

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

总分

V-GEN D4R8GL24A8R 8GB

V-GEN D4R8GL24A8R 8GB

差异规格评论

差异

G Skill Intl F3-10600CL9-2GBNT 2GB

需要考虑的原因
G Skill Intl F3-10600CL9-2GBNT 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 77

左右 66% 更低的延时
更快的写入速度，GB/s

8.4 8.2

测试中的平均数值

V-GEN D4R8GL24A8R 8GB

需要考虑的原因
V-GEN D4R8GL24A8R 8GB

报告一个错误

更快的读取速度，GB/s

15.5 13.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-10600CL9-2GBNT 2GB

V-GEN D4R8GL24A8R 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 77
读取速度，GB/s

13.2 15.5
写入速度，GB/s

8.4 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2070 1809

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Kingston KHX2400C11D3/4GX 4GB

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Kingston XK2M26-MIE 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

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Kingston KHX3200C18D4/8G 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Samsung M471A1K43CB1-CRC 8GB