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G Skill Intl F3-10666CL9-2GBRL 2GB
Kingston CBD26D4U9S8ME-8 8GB

G Skill Intl F3-10666CL9-2GBRL 2GB vs Kingston CBD26D4U9S8ME-8 8GB

总分
star star star star star
G Skill Intl F3-10666CL9-2GBRL 2GB

G Skill Intl F3-10666CL9-2GBRL 2GB

总分
star star star star star
Kingston CBD26D4U9S8ME-8 8GB

Kingston CBD26D4U9S8ME-8 8GB

差异 规格 评论

差异

G Skill Intl F3-10666CL9-2GBRL 2GB 需要考虑的原因
G Skill Intl F3-10666CL9-2GBRL 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 32
    左右 22% 更低的延时
Kingston CBD26D4U9S8ME-8 8GB 需要考虑的原因
Kingston CBD26D4U9S8ME-8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10666CL9-2GBRL 2GB
Kingston CBD26D4U9S8ME-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 32
  • 读取速度，GB/s
    13.4 left arrow 16.2
  • 写入速度，GB/s
    8.1 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2135 left arrow 3148

G Skill Intl F3-10666CL9-2GBRL 2GB RAM的比较

Samsung M378B1G73AH0-CH9 8GB
SK Hynix HMA82GS6JJR8N-VK 16GB

Kingston CBD26D4U9S8ME-8 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5471-012.A00 4GB
Kingston 99U5471-012.A00 4GB
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内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
内存RAM
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内存RAM
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内存RAM
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Kingston KVR533D2N4 512MB
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内存RAM
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内存RAM
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SK Hynix HMA81GU6DJR8N-WM 8GB
内存RAM
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Wilk Elektronik S.A. IRH3200D464L16/16G 16GB
内存RAM
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内存RAM
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内存RAM
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Kingston 9965669-018.A00G 16GB
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内存RAM