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G Skill Intl F3-10666CL9-2GBRL 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

G Skill Intl F3-10666CL9-2GBRL 2GB vs Patriot Memory (PDP Systems) 3600 C17 Series 4GB

总分
star star star star star
G Skill Intl F3-10666CL9-2GBRL 2GB

G Skill Intl F3-10666CL9-2GBRL 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3600 C17 Series 4GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB

差异 规格 评论

差异

G Skill Intl F3-10666CL9-2GBRL 2GB 需要考虑的原因
G Skill Intl F3-10666CL9-2GBRL 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 33
    左右 24% 更低的延时
Patriot Memory (PDP Systems) 3600 C17 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
报告一个错误
  • 更快的读取速度，GB/s
    17.5 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-10666CL9-2GBRL 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 33
  • 读取速度，GB/s
    13.4 left arrow 17.5
  • 写入速度，GB/s
    8.1 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2135 left arrow 3482

G Skill Intl F3-10666CL9-2GBRL 2GB RAM的比较

Samsung M378B1G73AH0-CH9 8GB
SK Hynix HMA82GS6JJR8N-VK 16GB

Patriot Memory (PDP Systems) 3600 C17 Series 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT16G4DFRA32A.C16FN 16GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Samsung M378A4G43AB2-CWE 32GB
Samsung M378A4G43AB2-CWE 32GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix HMA851S6CJR6N-VK 4GB
SK Hynix HMA851S6CJR6N-VK 4GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Apacer Technology 78.C1GMW.AZC0B 8GB
Apacer Technology 78.C1GMW.AZC0B 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Apacer Technology D22.2221ZA.001 8GB
Apacer Technology D22.2221ZA.001 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Corsair CMV8GX4M1A2133C15 8GB
Corsair CMV8GX4M1A2133C15 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
A-DATA Technology AO2P24HCST2-BW8S 16GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Corsair CMV16GX4M1A2133C15 16GB
Corsair CMV16GX4M1A2133C15 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BL8G30C15U4B.8FE 8GB
Crucial Technology BL8G30C15U4B.8FE 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Kingston 9905598-009.A00G 8GB
Kingston 9905598-009.A00G 8GB
内存RAM