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G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BL16G26C16U4W.16FE 16GB

G Skill Intl F3-1333C9-4GIS 4GB vs Crucial Technology BL16G26C16U4W.16FE 16GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
Crucial Technology BL16G26C16U4W.16FE 16GB

Crucial Technology BL16G26C16U4W.16FE 16GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
Crucial Technology BL16G26C16U4W.16FE 16GB 需要考虑的原因
Crucial Technology BL16G26C16U4W.16FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.6 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BL16G26C16U4W.16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    12.4 left arrow 17.6
  • 写入速度，GB/s
    7.5 left arrow 14.8
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 3687

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

Crucial Technology BL16G26C16U4W.16FE 16GB RAM的比较

Crucial Technology CT51264BD1339.M16F 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung 1600 CL10 Series 8GB
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内存RAM
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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
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Kingston 99U5700-027.A00G 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BL16G26C16U4W.16FE 16GB
Crucial Technology BL16G26C16U4W.16FE 16GB
内存RAM
Corsair CMK16GX4M2F4400C19 8GB
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Corsair CMK16GX4M2K4000C19 8GB
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内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
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Samsung M378A5244CB0-CRC 4GB
内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Kingston KV0M5R-MIE 8GB
内存RAM
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Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
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A-DATA Technology VDQVE1B16 2GB
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Kingston 9905663-030.A00G 16GB
内存RAM
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STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
内存RAM
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
Crucial Technology CT16G4SFD824A.M16FR 16GB
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