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G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

G Skill Intl F3-1333C9-4GIS 4GB vs Crucial Technology BLS16G4D26BFSB.16FBD 16GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
Crucial Technology BLS16G4D26BFSB.16FBD 16GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
Crucial Technology BLS16G4D26BFSB.16FBD 16GB 需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 28
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    17.9 left arrow 12.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 22
  • 读取速度，GB/s
    12.4 left arrow 17.9
  • 写入速度，GB/s
    7.5 left arrow 12.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 3152

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

Crucial Technology BLS16G4D26BFSB.16FBD 16GB RAM的比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
A-DATA Technology AE4S240038G17-BHYA 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
内存RAM
Elpida EBJ41HE4BDFA-DJ-F 4GB
Elpida EBJ41HE4BDFA-DJ-F 4GB
G Skill Intl F4-2400C17-8GISM 8GB
G Skill Intl F4-2400C17-8GISM 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston K821PJ-MIB 16GB
Kingston K821PJ-MIB 16GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-4000C18-16GTRS 16GB
G Skill Intl F4-4000C18-16GTRS 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
内存RAM