G Skill Intl F3-1333C9-4GIS 4GB vs Kingston KTP9W1-MIE 16GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 34

左右 18% 更低的延时

Kingston KTP9W1-MIE 16GB

需要考虑的原因
Kingston KTP9W1-MIE 16GB

报告一个错误

更快的读取速度，GB/s

15.7 12.4

测试中的平均数值
更快的写入速度，GB/s

12.2 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Kingston KTP9W1-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 34
读取速度，GB/s

12.4 15.7
写入速度，GB/s

7.5 12.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2014 2978

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Samsung SH5724G4UNC26P2-SC 32GB

Samsung SH5724G4UNC26P2-SC 32GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Kingston KTP9W1-MIE 16GB

Kingston KTP9W1-MIE 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

G Skill Intl F4-4000C17-16GTRGB 16GB

G Skill Intl F4-4000C17-16GTRGB 16GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

G Skill Intl F4-3600C17-8GTRG 8GB

G Skill Intl F4-3600C17-8GTRG 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

A-DATA Technology AO2P21FC8R2-BRGS 8GB

A-DATA Technology AO2P21FC8R2-BRGS 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston ACR26D4S9D8ME-16 16GB

Kingston ACR26D4S9D8ME-16 16GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Kingston XJ69DF-MIE 8GB

Kingston XJ69DF-MIE 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3600C16-16GTRGC 16GB

G Skill Intl F4-3600C16-16GTRGC 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Crucial Technology BL8G32C16U4WL.8FE 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Kingston MSI26D4S9D8ME-16 16GB

Kingston MSI26D4S9D8ME-16 16GB