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G Skill Intl F3-1333C9-4GIS 4GB
Kingston MSI24D4D4S8MB-8 8GB

G Skill Intl F3-1333C9-4GIS 4GB vs Kingston MSI24D4D4S8MB-8 8GB

总分
star star star star star
G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分
star star star star star
Kingston MSI24D4D4S8MB-8 8GB

Kingston MSI24D4D4S8MB-8 8GB

差异 规格 评论

差异

G Skill Intl F3-1333C9-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 29
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    12.4 left arrow 10.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    7.5 left arrow 5.1
    测试中的平均数值
Kingston MSI24D4D4S8MB-8 8GB 需要考虑的原因
Kingston MSI24D4D4S8MB-8 8GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1333C9-4GIS 4GB
Kingston MSI24D4D4S8MB-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 29
  • 读取速度，GB/s
    12.4 left arrow 10.8
  • 写入速度，GB/s
    7.5 left arrow 5.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2014 left arrow 1735

G Skill Intl F3-1333C9-4GIS 4GB RAM的比较

Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB

Kingston MSI24D4D4S8MB-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston MSI24D4D4S8MB-8 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
A-DATA Technology AO1P24HC4N2-BYNS 4GB
内存RAM
Kingston 9905584-023.A00LF 4GB
Kingston 9905584-023.A00LF 4GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M393A4K40BB0-CPB 32GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Apacer Technology GD2.1527CS.001 8GB
Apacer Technology GD2.1527CS.001 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston XK2M26-MIE-NX 16GB
Kingston XK2M26-MIE-NX 16GB
内存RAM
Samsung M3 91T2953GZ3-CF7 1GB
Samsung M3 91T2953GZ3-CF7 1GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
Crucial Technology CT8G4SFS8213.C8FBD1 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
InnoDisk Corporation M4S0-8GSSOCIK 8GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
SK Hynix HMA82GR7AFR4N-VK 16GB
SK Hynix HMA82GR7AFR4N-VK 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3600C19-16GTRG 16GB
G Skill Intl F4-3600C19-16GTRG 16GB
内存RAM
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B1G73BH0-YK0 8GB
Mushkin 99[2/7/4]190F 4GB
Mushkin 99[2/7/4]190F 4GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
Micron Technology 16ATF2G64AZ-2G6B1 16GB
内存RAM