G Skill Intl F3-1333C9-4GIS 4GB vs Micron Technology 16ATF4G64HZ-3G2E2 32GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Micron Technology 16ATF4G64HZ-3G2E2 32GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 43

左右 35% 更低的延时

Micron Technology 16ATF4G64HZ-3G2E2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-3G2E2 32GB

报告一个错误

更快的读取速度，GB/s

15.5 12.4

测试中的平均数值
更快的写入速度，GB/s

11.9 7.5

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Micron Technology 16ATF4G64HZ-3G2E2 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 43
读取速度，GB/s

12.4 15.5
写入速度，GB/s

7.5 11.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2014 2864

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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PNY Electronics PNY 2GB

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Samsung M471B5773DH0-CK0 2GB

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Kingston 9905598-025.A00G 8GB

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Crucial Technology CT102464BF160B-16F 8GB

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Corsair CMD8GX4M2B3200C16 4GB