G Skill Intl F3-1333C9-4GIS 4GB vs Micron Technology 8ATF1G64HZ-2G6B1 8GB

总分

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

总分

Micron Technology 8ATF1G64HZ-2G6B1 8GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

差异规格评论

差异

G Skill Intl F3-1333C9-4GIS 4GB

需要考虑的原因
G Skill Intl F3-1333C9-4GIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 33

左右 15% 更低的延时

Micron Technology 8ATF1G64HZ-2G6B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6B1 8GB

报告一个错误

更快的读取速度，GB/s

14.5 12.4

测试中的平均数值
更快的写入速度，GB/s

11.6 7.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1333C9-4GIS 4GB

Micron Technology 8ATF1G64HZ-2G6B1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 33
读取速度，GB/s

12.4 14.5
写入速度，GB/s

7.5 11.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2014 2590

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMSX16GX4M2A3000C16 8GB

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Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

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SK Hynix HMT451S6BFR8A-PB 4GB

Corsair CMW16GX4M2C3600C18 8GB

Corsair CMW16GX4M2C3600C18 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair CMK32GX4M2F4000C19 16GB

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