G Skill Intl F3-14900CL8-4GBXM 4GB vs Corsair CMH16GX4M2D3600C18 8GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Corsair CMH16GX4M2D3600C18 8GB

Corsair CMH16GX4M2D3600C18 8GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

Corsair CMH16GX4M2D3600C18 8GB

需要考虑的原因
Corsair CMH16GX4M2D3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 -15% 更低的延时
更快的读取速度，GB/s

19.4 17.4

测试中的平均数值
更快的写入速度，GB/s

16.0 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Corsair CMH16GX4M2D3600C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 27
读取速度，GB/s

17.4 19.4
写入速度，GB/s

10.9 16.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 3646

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1K43BB1-CPB 8GB

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Team Group Inc. Vulcan-1600 4GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Apacer Technology 78.01GA0.9K5 1GB

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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AMD R5316G1609U2K 8GB

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Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Roa Logic BV iGame DDR4 8G 3000 8GB

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Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB