G Skill Intl F3-14900CL8-4GBXM 4GB vs Crucial Technology BL16G36C16U4W.M8FB1 16GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

Crucial Technology BL16G36C16U4W.M8FB1 16GB

需要考虑的原因
Crucial Technology BL16G36C16U4W.M8FB1 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 -19% 更低的延时
更快的读取速度，GB/s

19.4 17.4

测试中的平均数值
更快的写入速度，GB/s

15.3 10.9

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 26
读取速度，GB/s

17.4 19.4
写入速度，GB/s

10.9 15.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2735 3783

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Kingston ACR26D4U9S8HJ-8 8GB

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Kingston 99U5429-007.A00LF 2GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

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G Skill Intl F4-2133C15-8GRK 8GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston XCCT36-MIE 16GB

Kingston XCCT36-MIE 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Mushkin MRA4S266GHHF32G 32GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB