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G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 69
    左右 55% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 8.5
    测试中的平均数值
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 69
  • 读取速度，GB/s
    17.4 left arrow 16.1
  • 写入速度，GB/s
    10.9 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 1794

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB RAM的比较

Kingston 9965669-018.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Avant Technology F6451U64F9333G 4GB
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Crucial Technology BLS16G4D26BFSC.16FD 16GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
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Kingston 99U5584-005.A00LF 4GB
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Samsung M378B5173BH0-CH9 4GB
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内存RAM
G Skill Intl F4-2133C15-16GFXR 16GB
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内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
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Corsair CMK16GX4M4B3333C16 4GB
内存RAM
Ramaxel Technology RMR5040ED58E9W1600 4GB
Ramaxel Technology RMR5040ED58E9W1600 4GB
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Hyundai Inc GR26C16S8K2HU416 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Crucial Technology BLS4G4D240FSB.8FBD 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
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内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BL32G32C16S4B.16FB 32GB
Crucial Technology BL32G32C16S4B.16FB 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
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Kingston KMKYF9-MIB 8GB
内存RAM
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G Skill Intl F4-2400C16-16GFXR 16GB
G Skill Intl F4-2400C16-16GFXR 16GB
内存RAM
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G Skill Intl F3-2800C12-8GTXDG 8GB
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Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
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Kingston HP26D4U9S8ME-8X 8GB
内存RAM