RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-14900CL8-4GBXM 4GB
Hewlett-Packard 7EH55AA# 8GB
比较
G Skill Intl F3-14900CL8-4GBXM 4GB vs Hewlett-Packard 7EH55AA# 8GB
总分
G Skill Intl F3-14900CL8-4GBXM 4GB
总分
Hewlett-Packard 7EH55AA# 8GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
需要考虑的原因
Hewlett-Packard 7EH55AA# 8GB
报告一个错误
更快的读取速度,GB/s
18.4
17.4
测试中的平均数值
更快的写入速度,GB/s
13.1
10.9
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Hewlett-Packard 7EH55AA# 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
31
读取速度,GB/s
17.4
18.4
写入速度,GB/s
10.9
13.1
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2735
3219
G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Hewlett-Packard 7EH55AA# 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C16-4GRB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Mushkin MRA4S320GJJM16G 16GB
Kingston 9905316-106.A02LF 1GB
Corsair CMK128GX4M8Z2933C16 16GB
Kingston 9965662-016.A00G 16GB
Kingston 9965669-005.A01G 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston KST-2133MHZ-4G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
A-DATA Technology AM1U16BC4P2-B19C 4GB
Kingston CBD24D4S7D8MA-16 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Kingston ACR26D4U9D8MH-16 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M471A1G43DB0-0-B 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingston KHX2133C11D3/4GX 4GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
报告一个错误
×
Bug description
Source link