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G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs Micron Technology 9ASF51272PZ-2G1B1 4GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 51
    左右 39% 更低的延时
  • 更快的读取速度，GB/s
    17.4 left arrow 9.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 7.8
    测试中的平均数值
Micron Technology 9ASF51272PZ-2G1B1 4GB 需要考虑的原因
Micron Technology 9ASF51272PZ-2G1B1 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 51
  • 读取速度，GB/s
    17.4 left arrow 9.6
  • 写入速度，GB/s
    10.9 left arrow 7.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 2248

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

Micron Technology 9ASF51272PZ-2G1B1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Kingston KVR800D2N6/2G 2GB
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Kingston 9905622-075.A00G 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
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Kingston 9905702-135.A00G 8GB
Kingston 9905702-135.A00G 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
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内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
Micron Technology 9ASF51272PZ-2G1B1 4GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
SK Hynix HMA84GR7JJR4N-VK 32GB
SK Hynix HMA84GR7JJR4N-VK 32GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Corsair CMK64GX4M2C3200C16 32GB
Corsair CMK64GX4M2C3200C16 32GB
内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
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Crucial Technology CT32G4SFD832A.M16FF 32GB
内存RAM
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Corsair CM4X4GF2666C16K4 4GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Corsair CMW16GX4M2K4266C19 8GB
内存RAM