G Skill Intl F3-14900CL8-4GBXM 4GB vs Panram International Corporation PUD42133C154G2VS 4GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

更快的读取速度，GB/s

17.4 15.4

测试中的平均数值

Panram International Corporation PUD42133C154G2VS 4GB

需要考虑的原因
Panram International Corporation PUD42133C154G2VS 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 31

左右 -24% 更低的延时
更快的写入速度，GB/s

11.9 10.9

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Panram International Corporation PUD42133C154G2VS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 25
读取速度，GB/s

17.4 15.4
写入速度，GB/s

10.9 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2735 1870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Transcend Information TS1GSH64V1H 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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Crucial Technology BLS8G4S26BFSDK.8FD 8GB

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Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Team Group Inc. TEAMGROUP-UD4-4500 8GB

Samsung M471B5273EB0-CK0 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB

Crucial Technology CT4G4DFS824A.C8FADP 4GB