G Skill Intl F3-14900CL8-4GBXM 4GB vs Transcend Information TS512MSH64V4H 4GB

总分

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分

Transcend Information TS512MSH64V4H 4GB

Transcend Information TS512MSH64V4H 4GB

差异规格评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB

需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 45

左右 31% 更低的延时
更快的读取速度，GB/s

17.4 5.3

测试中的平均数值
更快的写入速度，GB/s

10.9 8.4

测试中的平均数值

Transcend Information TS512MSH64V4H 4GB

需要考虑的原因
Transcend Information TS512MSH64V4H 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-14900CL8-4GBXM 4GB

Transcend Information TS512MSH64V4H 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

31 45
读取速度，GB/s

17.4 5.3
写入速度，GB/s

10.9 8.4
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2735 1535

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5273CH0-CH9 4GB

Kingston 9905630-039.A00G 16GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Avant Technology J642GU42J5213N1 16GB

Avant Technology J642GU42J5213N1 16GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Kingston 9965662-008.A01G 16GB

Kingston 9965662-008.A01G 16GB