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G Skill Intl F3-1600C11-4GIS 4GB
Crucial Technology CT51264BF160B.D16F 4GB

G Skill Intl F3-1600C11-4GIS 4GB vs Crucial Technology CT51264BF160B.D16F 4GB

总分
star star star star star
G Skill Intl F3-1600C11-4GIS 4GB

G Skill Intl F3-1600C11-4GIS 4GB

总分
star star star star star
Crucial Technology CT51264BF160B.D16F 4GB

Crucial Technology CT51264BF160B.D16F 4GB

差异 规格 评论

差异

G Skill Intl F3-1600C11-4GIS 4GB 需要考虑的原因
G Skill Intl F3-1600C11-4GIS 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 13.3
    测试中的平均数值
Crucial Technology CT51264BF160B.D16F 4GB 需要考虑的原因
Crucial Technology CT51264BF160B.D16F 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 35
    左右 -30% 更低的延时
  • 更快的写入速度，GB/s
    9.9 left arrow 9.0
    测试中的平均数值

规格

完整的技术规格清单
G Skill Intl F3-1600C11-4GIS 4GB
Crucial Technology CT51264BF160B.D16F 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    35 left arrow 27
  • 读取速度，GB/s
    15.5 left arrow 13.3
  • 写入速度，GB/s
    9.0 left arrow 9.9
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2405 left arrow 2221

G Skill Intl F3-1600C11-4GIS 4GB RAM的比较

G Skill Intl F3-1600C11-4GISL 4GB
Essencore Limited KD48GS88J-26N1900 8GB

Crucial Technology CT51264BF160B.D16F 4GB RAM的比较

Samsung M471B5173QH0-YK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F3-1600C11-4GIS 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMT32GX4M2C3000C15 16GB
Corsair CMT32GX4M2C3000C15 16GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
Crucial Technology CT16G4DFS8266.C8FB 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Samsung M471A1G43EB1-CRC 8GB
Samsung M471A1G43EB1-CRC 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
Micron Technology 36ASF4G72PZ-2G6D1 32GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
Crucial Technology BL8G30C15U4W.M8FE1 8GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMW16GX4M2C3200C14 8GB
Corsair CMW16GX4M2C3200C14 8GB
内存RAM
SK Hynix HMT125U6TFR8C-H9 2GB
SK Hynix HMT125U6TFR8C-H9 2GB
Kingston KHX1600C9D3/2GX 2GB
Kingston KHX1600C9D3/2GX 2GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
Ramaxel Technology RMT3170EB68F9W1600 4GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Heoriady M471A1K43CB1-CTD 8GB
Heoriady M471A1K43CB1-CTD 8GB
内存RAM