G Skill Intl F3-17000CL11-4GBXL 4GB vs InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

总分

G Skill Intl F3-17000CL11-4GBXL 4GB

G Skill Intl F3-17000CL11-4GBXL 4GB

总分

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

差异规格评论

差异

G Skill Intl F3-17000CL11-4GBXL 4GB

需要考虑的原因
G Skill Intl F3-17000CL11-4GBXL 4GB

报告一个错误

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

需要考虑的原因
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 -59% 更低的延时
更快的读取速度，GB/s

17.2 16.2

测试中的平均数值
更快的写入速度，GB/s

13.0 10.7

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-17000CL11-4GBXL 4GB

InnoDisk Corporation M4SI-8GS1NC0K-C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 22
读取速度，GB/s

16.2 17.2
写入速度，GB/s

10.7 13.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2644 3007

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.C1GMW.AZC0B 8GB

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Corsair CMW32GX4M4C3200C16 8GB

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Kingston KHX1600C9D3/8G 8GB

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Kingston 9965525-155.A00LF 8GB

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Crucial Technology CT8G4DFS824A.M8FA 8GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology CT4G4DFS8213.C8FBD2 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Kingston KHX1866C9D3/8GX 8GB

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Kingston 99U5701-036.A00G 16GB

Kingston 99U5701-036.A00G 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Mushkin 99[2/7/4]191[F/T] 4GB

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